ES3BB [BL Galaxy Electrical]
SURFACE MOUNT RECTIFIER; 表面贴装整流器型号: | ES3BB |
厂家: | BL Galaxy Electrical |
描述: | SURFACE MOUNT RECTIFIER |
文件: | 总2页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ES3AB--- ES3GB
GALAXY ELECTRICAL
BL
VOLTAGE RANGE: 50 --- 400 V
SURFACE MOUNT RECTIFIER
CURRENT: 3.0 A
FEATURES
DO-214AA(SMB)
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ES3AB ES3BB
ES3CB ES3DB ES3GB
UNITS
EA
50
35
50
EB
100
70
EC
150
105
150
ED
200
140
200
EG
400
210
400
Device marking code
Maximum recurrent peak reverse voltage
V
V
V
VRRM
VRMS
VDC
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
100
A
IF(AV)
3.0
@T =100
A
Peak forward surge current
A
8.3ms single half-sine-wave
IFSM
100
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage at3.0 A
V
VF
IR
0.90
1.25
Maximum reverse current
@TA=25
10
A
at rated DC blocking voltage @TA=125
500
Typical reverse recovery time (Note1)
ns
trr
25
45
35
Typical junction capacitance
Typical thermal resistance
(Note2)
pF
CJ
Rθ
40
/W
JA
Operating junction temperature range
TJ
- 55 ---- + 150
- 55 ---- + 150
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
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2. Measured at 1.0MHZ and applied reverse voltage of 4.0VDC.
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
BLGALAXY ELECTRICAL
1.
Document Number 0280030
RATINGS AND CHARACTERISTIC CURVES
ES3AB --- ES3GB
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
0
(+)
PULSE
GENERATOR
(NOTE2)
-0.25A
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE 1)
1
NONIN-
DUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
SET TIME BASE FOR 20/30 ns/cm
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
z
100
10
3
3.0
1.0
Single Phase
Half Wave 60H
1.5
Z
Resistive or
TJ=25
Inductive Load
0.1
Pulse width=300
1% Duty Cycle
s
0
0
25
50 75
100
125 150 175
0.01
0
0.4
0.8 1.0
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
FIG.5 -- PEAK FORWARD SURGE CURRENT
200
100
100
60
8.3ms Single Half
Sine-Wave
80
60
40
20
10
6
40
20
4
TJ=25
2
1
0
1
5
10
50 100
0.1 0.2 0.4
1
2
4
10 20 40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
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Document Number 0280030
BLGALAXY ELECTRICAL
2.
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